Manipdation of the Ti/Si reaction paths by introducing an amorphous Ge interlayer
نویسندگان
چکیده
Evolution of the Ti/a-GelSi trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti,GeS is the first phase observed during the reaction. Preceding the equilibrium C5CTi(Si,Ge),, a substitutional solid solution type C49-Ti(Si,Ge), forms upon annealing at 550-600 “C, regardless of the replacement of amorphous phase by the crystalline phase. The C49-to-C54 polymorphic transformation occurs at -650 “C. The reaction path is also correlated with the change in film resistance obtained from a four-point sheet resistance measurement.
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